GT10G101 Datasheet - Toshiba

GT10G101 Silicon N-Channel MOSFET

GT10G101 IGBT GT10G101 ○ 。。。 : VCE (sat) = 8V () (IC = 130A) : VGE = 20V () (IC = 130A) : mm (Ta = 25°C) DC 1ms Ta = 25°C Tc = 25°C VCES VGES IC ICP PC PC Tj Tstg ― 400 ±25 10 A 130 2.0 W 30 150 －55～150 0.6 °C °C Nm V V JEDEC EIAJ ― ― 2-10R1C (Ta = 25°C) IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c) VGE = ±25V, VCE = 0 VCE = 400V, VGE = 0 IC = 1mA, VCE = 5V IC = 130A, VGE = 20V () VCE = 10V, VGE = 0, f = 1MHz.

GT10G101-Toshiba.pdf