2SK2916
2SK2916 is Silicon N Channel MOS Type Field Effect Transistor manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSV)
DC- DC Converter, Relay Drive and Motor Drive Applications
Unit: mm z Low drain- source ON resistance
: RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance
: |Yfs| = 11 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
IAR EAR Tch Tstg
500 500 ±30 14 56 80
14 8 150
- 55~150
V V V A A W m J
A m J °C °C
JEDEC
- JEITA
- TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case Thermal resistance, channel to...
