2SJ103 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications Unit: mm - High breakdown voltage: VGDS = 50 V - High input impedance: IGSS = 1.0 n A (max) (VGS = 30 V) - Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = - 5 m A) - plimentary to 2SK246 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDS IG PD Tj Tstg - 10 m A 300 m W °C - 55~125 °C Note: Using continuously under heavy loads (e.g. the application of JEDEC TO-92 high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA SC-43 reliability significantly even if the operating conditions (i.e. TOSHIBA 2-5F1C operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.21 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance IGSS V (BR)...