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2SJ106
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ106
Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
Unit: mm
• High breakdown voltage: VGDS = 50 V • High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) • Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA) • Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
50 −10 150 125 −55~125
Unit
V mA mW °C °C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
2SJ106 Datasheet
