2SB1020A
2SB1020A is Silicon PNP Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power)
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
- High DC current gain: h FE = 2000 (min) (VCE =
- 3 V, IC =
- 3 A)
- Low saturation voltage: VCE (sat) =
- 1.5 V (max) (IC =
- 3 A)
- plementary to 2SD1415A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
Tj Tstg
- 100
- 100
- 5
- 7
- 10
- 0.7 2.0 30 150
- 55 to 150
°C...
