Datasheet Details
| Part number | B1020 |
|---|---|
| Manufacturer | JMnic |
| File Size | 66.52 KB |
| Description | 2SB1020 |
| Download | B1020 Download (PDF) |
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| Part number | B1020 |
|---|---|
| Manufacturer | JMnic |
| File Size | 66.52 KB |
| Description | 2SB1020 |
| Download | B1020 Download (PDF) |
|
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¡¤ With TO-220Fa package ¡¤ High DC current gain ¡¤ Low saturation voltage ¡¤ Complement to type 2SD1415 APPLICATIONS www.DataSheet4U.com ¡¤ ¡¤ High power switching applications Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25¡æ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -5 -7 -0.2 30 150 -55~150 ¡æ ¡æ UNIT V V V A A W JMnic Product Specification Silicon PNP Power Transistors 2SB1020 CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-50mA;
IB=0 IC=-3A ;IB=-6mA IC=-7A ;IB=-14mA IC=-3A ;IB=-6mA VCB=-100V;
IE=0 VEB=-5V;
JMnic Product Specification Silicon PNP Power Transistors 2SB1020.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| B1020A | 2SB1020A | Toshiba Semiconductor | |
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B1020X | SCHOTTKY BARRIER DIODE | JCET |
| Part Number | Description |
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