logo

TRS3E65H Datasheet, Toshiba

TRS3E65H diode equivalent, sic schottky barrier diode.

TRS3E65H Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 412.39KB)

TRS3E65H Datasheet
TRS3E65H
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 412.39KB)

TRS3E65H Datasheet

Features and benefits

(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 9nC (typ.) (4) Low reverse current: IR = 0.4 µA (typ.).

Application


* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies
* DC-DC Converters 2. Featu.

Image gallery

TRS3E65H Page 1 TRS3E65H Page 2 TRS3E65H Page 3

TAGS

TRS3E65H
SiC
Schottky
Barrier
Diode
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

Related datasheet

TRS3-0MCR00

TRS3-0MCR01

TRS3-0MLR00

TRS3-0MSR01E

TRS3-100MCR00

TRS3-100MCR01

TRS3-100MLR00

TRS3-100MSR01E

TRS3-10MCR00

TRS3-10MCR01

TRS3-10MLR00

TRS3-10MSR01E

TRS3-110MCR00

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts