Datasheet4U Logo Datasheet4U.com

TPH2R608NH - N-Channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 28 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH2R608NH 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltag.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPH200A Current Transducers Topstek
TPH20A-LTC Current Transducers Topstek
TPH2405D 2W 3KVDC Isolated Single & Dual Output DC/DC Converters TOPPOWER
TPH2405DA 2W 3KVDC Isolated Single & Dual Output DC/DC Converters TOPPOWER
TPH2405S 2W 3KVDC Isolated Single & Dual Output DC/DC Converters TOPPOWER

Other Datasheets by Toshiba

Part Number Description
TPH2R003PL Silicon N-channel MOSFET
TPH2R104PL Silicon N-channel MOSFET
TPH2R306NH MOSFETs
TPH2R506PL Silicon N-channel MOSFET
TPH2R805PL Silicon N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-channel MOS (U-MOS-H) TPH2R608NH 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 28 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH2R608NH 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.