Datasheet4U Logo Datasheet4U.com

TPH2R306NH - MOSFETs

Key Features

  • (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 26 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current.

📥 Download Datasheet

Other Datasheets by Toshiba

Part Number Description
TPH2R003PL Silicon N-channel MOSFET
TPH2R104PL Silicon N-channel MOSFET
TPH2R506PL Silicon N-channel MOSFET
TPH2R608NH N-Channel MOSFET
TPH2R805PL Silicon N-channel MOSFET
TPH2010FNH Silicon N-channel MOSFET
TPH2900ENH Silicon N-channel MOSFET
TPH11003NL MOSFETs
TPH11006NL Silicon N-channel MOSFET
TPH1110ENH Silicon N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPH2R306NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH2R306NH 1. Applications • • • DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 26 nC (typ.) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.