TPCP8514 Datasheet Silicon NPN Transistor

Manufacturer: Toshiba

Datasheet Details

Bipolar Transistors Silicon NPN Epitaxial Type TPCP8514 TPCP8514 1.

Applications • High-Speed Switching • DC-DC Converters 2.

(1) High DC current gain: hFE = 120 to 240 (VCE = 2 V, IC = 0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.15 V (max) (IC = 1.0 A, IB = 0.1 A) (3) High-speed switching: tf = 170 ns (typ. ) (IC = 1.0 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-01 2023-01-16 Rev.2.0 TPCP8514 4. Absolute.