TK32E12N1 mosfet equivalent, silicon n-channel mosfet.
(1) Low drain-source on-resistance: RDS(ON) = 11.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0.
* Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 11.0 mΩ (typ.) (VGS = 10 V).
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