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TK30E06N1 Datasheet, Toshiba Semiconductor

TK30E06N1 mosfet equivalent, silicon n-channel mosfet.

TK30E06N1 Avg. rating / M : 1.0 rating-11

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TK30E06N1 Datasheet

Features and benefits

(1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 .

Application


* Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V).

Image gallery

TK30E06N1 Page 1 TK30E06N1 Page 2 TK30E06N1 Page 3

TAGS

TK30E06N1
Silicon
N-Channel
MOSFET
Toshiba Semiconductor

Manufacturer


Toshiba (https://www.toshiba.com/) Semiconductor

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