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TK110P10PL Datasheet Toshiba

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Features and Benefits

(1) High-speed switching (2) Small gate charge: QSW = 9.3 nC (typ.) (3) Small output charge: Qoss = 32 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 8.9 mΩ (typ.) (VGS = 10 V) (5) Low leakag.

TK110P10PL TK110P10PL TK110P10PL
TAGS
TK110P10PL
Silicon
N-Channel
MOSFET
TK110P10PL
TK11031
TK11032
Toshiba

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