* Low quiescent bias current (IB = 2 μA (max) at IOUT = 0 mA, Tj = -40 to 85 °C)
* Low dropout voltage VDO = 250 mV (typ.) at 2.5 V-output, IOUT = 150 mA
* Wi.

that require high-density board assembly such as cellular phones. Weight : 0.6 mg ( typ.) SDFN4/SDFN4E Features
*.

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