TC58NYG1S3HBAI4 e2prom equivalent, 2 gbit (256m x 8 bit) cmos nand e2prom.
* Organization
Memory cell array Register Page size Block size
x8 2176 128K 8 2176 8 2176 bytes (128K 8K) bytes
* Modes Read, Reset, Auto Page Program, .
such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.
The TC58NYG1S3HBAI4 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 2048blocks. The device has two 2176-byte static registers which a.
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