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TC58NYG0S3EBAI4 Datasheet, Toshiba

TC58NYG0S3EBAI4 e2prom equivalent, 1 gbit (128m x 8 bit) cmos nand e2prom.

TC58NYG0S3EBAI4 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 477.07KB)

TC58NYG0S3EBAI4 Datasheet
TC58NYG0S3EBAI4
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 477.07KB)

TC58NYG0S3EBAI4 Datasheet

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has two 2112-byte static registers which allow .

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TAGS

TC58NYG0S3EBAI4
GBIT
128M
BIT
CMOS
NAND
E2PROM
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

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