• Part: TC58NVG6T2FTA00
  • Description: 64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
  • Manufacturer: Toshiba
  • Size: 232.87 KB
TC58NVG6T2FTA00 Datasheet (PDF) Download
Toshiba
TC58NVG6T2FTA00

Key Features

  • Organization Memory cell array Register Page size Block size
  • TC58NVG6T2FTA00 9216  1047.1171875K  8 9216  8 9216 bytes (2064K  258K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Page Program, Multi Block Erase, Multi Page Read Mode control Serial input/output Command control Number of valid blocks Min 4000 blocks Max 4156 blocks Power supply VCC  2.7 V to 3.6 V Access time Cell array to register Serial Read Cycle Program/Erase time Auto Page Program Auto Block Erase Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 110 s max 25 ns min 2000 s/page typ. 3 ms/block typ. 50 mA max. 50mA max. 50 mA max. 100 A max * * * * * * *
  • Package TSOP I 48-P-1220-0.50C (Weight: 0.53 g typ.) FOR RELIABILITY GUIDANCE, PLEASE REFER TO THE APPLICATION NOTES AND COMMENTS (15). 60 bit ECC for each 1K bytes is required. 1