Datasheet4U Logo Datasheet4U.com

TC58NVG6T2FTA00 - 64 GBIT (8G X 8 BIT) CMOS NAND E2PROM

General Description

The TC58NVG6T2FTA00 is a single 3.3 V 64 Gbit (79,054,700,544 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192  1024) bytes  258 pages 4156 blocks.

Key Features

  • Organization Memory cell array Register Page size Block size.
  • TC58NVG6T2FTA00 9216  1047.1171875K  8 9216  8 9216 bytes (2064K  258K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Page Program, Multi Block Erase, Multi Page Read Mode control Serial input/output Command control Number of valid blocks Min 4000 blocks Max 4156 blocks Power supply VCC  2.7 V to 3.6 V Access time Cell array to register Serial Read Cycle Program/Erase time Auto Page.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TC58NS256DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM Toshiba Semiconductor
TC581282AXB 128-MBIT (16M X 8 BITS) CMOS NAND E2PROM Toshiba Semiconductor
TC58128FT 128M-Bit CMOS NAND EPROM Toshiba Semiconductor
TC58128FTI 128M-Bit CMOS NAND EPROM Toshiba Semiconductor
TC5816BDC 16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
TC58NVG6D2GTA00 64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
TC58NVG6DDJTA00 64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
TC58NVG0S3AFT00 1 GBit CMOS NAND EPROM
TC58NVG0S3AFT05 1 GBit CMOS NAND EPROM
TC58NVG0S3ETA00 1 GBIT (128M X 8 BIT) CMOS NAND E2PROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG6T2FTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64 GBIT (8G  8 BIT) CMOS NAND E PROM (Triple-Level-Cell) DESCRIPTION The TC58NVG6T2FTA00 is a single 3.3 V 64 Gbit (79,054,700,544 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192  1024) bytes  258 pages 4156 blocks. The device has four 9216-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 9216-byte increments. The Erase operation is implemented in a single block unit (2064 Kbytes  258 Kbytes:9216 bytes x 258 pages).