Datasheet4U Logo Datasheet4U.com

TC58NVG5D2ELA48 Datasheet 32 GBIT (4G x 8 BIT) CMOS NAND E2PROM

Manufacturer: Toshiba

Overview: TOSHIBA CONFIDENTIAL TC58NVG5D2ELA48 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 GBIT (4G × 8 BIT) CMOS NAND E2PROM.

📥 Download Datasheet

General Description

The TC58NVG5D2 is a single 3.3 V 32 Gbit (36,393,025,536 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 376) bytes × 128 pages × 4148 blocks.

The device has two 8568-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8568-byte increments.

The Erase operation is implemented in a single block unit (1 Mbytes + 47 Kbytes: 8568 bytes × 128 pages).

Key Features

  • Organization Memory cell array Register Page size Block size TC58NVG4D2E 8568 × 518.5K × 8 8568 × 8 8568 bytes (1M + 47 K) bytes.
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Mullti Page Read.
  • Mode control Serial input/output Command control.
  • Number of valid blocks Min 3936 blocks Max 4148 blocks.
  • Power supply VCC = 2.7 V to 3.6 V.
  • Access time C.

More Datasheets from Toshiba

Part Number Description
TC58NVG5D2FTA00 32 GBIT (4G X 8 BIT) CMOS NAND E2PROM
TC58NVG5D2FTAI0 32 GBIT (4G X 8 BIT) CMOS NAND E2PROM
TC58NVG5T2HTA00 32 GBIT (4G X 8 BIT) CMOS NAND E2PROM
TC58NVG0S3AFT00 1 GBit CMOS NAND EPROM
TC58NVG0S3AFT05 1 GBit CMOS NAND EPROM
TC58NVG0S3ETA00 1 GBIT (128M X 8 BIT) CMOS NAND E2PROM
TC58NVG0S3HBAI4 1G BIT (128M x 8-BIT) CMOS NAND E2PROM
TC58NVG0S3HBAI6 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM
TC58NVG0S3HTA00 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
TC58NVG0S3HTAI0 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM