TC58NVG4S2FTA00
Overview
The TC58NVG4S2F is a single 3.3V 16 Gbit (18,621,267,968 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 576) bytes × 64 pages × 4148blocks. The device has two 8768-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8768-byte increments.
- Organization Memory cell array Register Page size Block size x8 8768 × 259.25K × 8 8768 × 8 8768 bytes (512K + 36K) bytes
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
- Mode control Serial input/output Command control
- Number of valid blocks Min 4016 blocks Max 4148 blocks
- Power supply VCC = 2.7V to 3.6V
- Access time Cell array to register TBD µs max Serial Read Cycle 25 ns min (CL=50pF)
- Program/Erase time Auto Page Program Auto Block Erase TBD µs/page typ. TBD ms/block typ.
- Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 mA max. 30 mA max 30 mA max 50 µA max
- Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
- TBD bit ECC for each 512Byte is required.
