TC58NVG4S2FTA00 Datasheet | Toshiba

DESCRIPTION The TC58NVG4S2F is a single 3.3V 16 Gbit (18,621,267,968 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 576) bytes × 64 pages × 4148blocks. The device has two 8768-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8768-byte increments. The Erase operation is implemented in a single block unit (512 Kbytes + 36 Kbytes: 8768 bytes × 64 pages). The TC58NVG4S2F is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. FEATURES - Organization Memory cell array Register Page size Block size x8 8768 × 259.25K × 8 8768 × 8 8768 bytes (512K + 36K) bytes - Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read - Mode control Serial input/output mand control - Number of valid blocks Min 4016 blocks Max 4148 blocks - Power supply VCC = 2.7V to 3.6V - Access time Cell array to register TBD µs max Serial Read Cycle 25 ns min (CL=50p F) - Program/Erase time Auto Page Program Auto Block Erase TBD µs/page typ. TBD ms/block typ. - Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 m A max. 30 m A max 30 m A max 50 µA max - Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.) - TBD bit ECC for each 512Byte is required. 1 2009-10-02C TOSHIBA CONFIDENTIAL PIN ASSIGNMENT (TOP VIEW) PINNAMES ×8 Vcc Vss NC NC NC NC RY / BY RE CE NC NC VCC VSS NC NC CLE ALE WE WP NC NC NC Vss Vcc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 TC58NVG4D2FTA00 ×8...