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TC58NVG4S2FTA00 - 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM

General Description

The TC58NVG4S2F is a single 3.3V 16 Gbit (18,621,267,968 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 576) bytes × 64 pages × 4148blocks.

Key Features

  • Organization Memory cell array Register Page size Block size x8 8768 × 259.25K × 8 8768 × 8 8768 bytes (512K + 36K) bytes.
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
  • Mode control Serial input/output Command control.
  • Number of valid blocks Min 4016 blocks Max 4148 blocks.
  • Power supply VCC = 2.7V to 3.6V.
  • Access time Cell array.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA CONFIDENTIAL TC58NVG4S2FTA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG4S2F is a single 3.3V 16 Gbit (18,621,267,968 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 576) bytes × 64 pages × 4148blocks. The device has two 8768-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8768-byte increments. The Erase operation is implemented in a single block unit (512 Kbytes + 36 Kbytes: 8768 bytes × 64 pages). The TC58NVG4S2F is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.