Description
The TC58NVG0S3HBAI4 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 1024blocks.
Features
- Organization Memory cell array Register Page size Block size.
- x8 2176 64K 8 2176 8 2176 bytes (128K 8K) bytes
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy Mode control Serial input/output Command control Number of valid blocks Min 1004 blocks Max 1024 blocks Power supply VCC 2.7V to 3.6V Access time Cell array to register 25 s max Serial Read Cycle 25 ns min (CL=50pF) Program/Erase time Auto Page Program Auto Block Erase Operating cu.
TC58NVG0S3HBAI4-Toshiba.pdf
