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TC58NVG0S3HBAI4 1G BIT (128M x 8-BIT) CMOS NAND E2PROM

TC58NVG0S3HBAI4 Description

TC58NVG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT (128M  8 BIT) CMOS NAND E PROM .
The TC58NVG0S3HBAI4 is a single 3.

TC58NVG0S3HBAI4 Features

* Organization Memory cell array Register Page size Block size
* x8 2176  64K  8 2176  8 2176 bytes (128K  8K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy Mode control Serial input/output Command control Number of valid blocks Min 1004 bloc

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BIT 128M 8-BIT CMOS NAND E2PROM Toshiba
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