TC58NVG0S3HBAI4 datasheet, e2prom equivalent, Toshiba

Features and benefits

* Organization Memory cell array Register Page size Block size
*
* x8 2176  64K  8 2176  8 2176 bytes (128K  8K) bytes Modes Read, Reset, Auto Page Progr.

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TC58NVG0S3HBAI4 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks. The device has a 2176-byte static registers which allow.

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