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TC58NVG1S3HBAI4 Datasheet, Toshiba

TC58NVG1S3HBAI4 e2prom equivalent, 2 gbit (256m x 8 bit) cmos nand e2prom.

TC58NVG1S3HBAI4 Avg. rating / M : 1.0 rating-11

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TC58NVG1S3HBAI4 Datasheet

Features and benefits


* Organization Memory cell array Register Page size Block size x8 2176  128K  8 2176  8 2176 bytes (128K  8K) bytes
* Modes Read, Reset, Auto Page Program, .

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TC58NVG1S3HBAI4 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks. The device has two 2176-byte static registers which a.

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TAGS

TC58NVG1S3HBAI4
GBIT
256M
BIT
CMOS
NAND
E2PROM
TC58NVG1S3HBAI6
TC58NVG1S3HTA00
TC58NVG1S3HTAI0
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)
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