TC58NVG1S3HBAI6 datasheet, e2prom equivalent, Toshiba

Features and benefits

* Organization x8 Memory cell array 2176  128K  8 Register 2176  8 Page size 2176 bytes Block size (128K  8K) bytes
* Modes Read, Reset, Auto Page P.

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TC58NVG1S3HBAI6 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks. The device has two 2176-byte static registers which a.

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