TC58BYG2S0HBAI4 e2prom equivalent, 4 gbit (512m x 8 bit) cmos nand e2prom.
* Organization
Memory cell array Register Page size Block size
x8
4224 × 128K × 8 4224 × 8 4224 bytes
(256K + 8K) bytes
* Modes Read, Reset, Auto Page Program, .
such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.
The TC58BYG2S0HBAI4 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks. The device has a 4224-byte static register which allo.
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