TC58BYG0S3HBAI4 datasheet, e2prom equivalent, Toshiba

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Features and benefits

* Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes
* Modes Read, Reset, Auto Page Pro.

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TC58BYG0S3HBAI4 is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allow.

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