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TC55B465P-10 - SILICON GATE CMOS STATIC RAM

Description

The TC55B465P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply.

Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.

Features

  • low power dissipation when the device is deselected using chip enable (CE) and has an output enable input (OE) for fast memory access. The TC55B465P/J is suitable for use in high speed.

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Other Datasheets by Toshiba

Part Number Description
TC55B465P-12 SILICON GATE CMOS STATIC RAM
TC55B465P 64K x 4-Bit BiCMOS Static RAM
TC55B465J 64K x 4-Bit BiCMOS Static RAM
TC55B465J-10 SILICON GATE CMOS STATIC RAM
TC55B465J-12 SILICON GATE CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA 1l:55~65P/J-I0/12 SILICON GATE BiCMOS 65,536 WORD x 4 BIT BiCMOS STATIC RAM Description The TC55B465P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation. The TC55B465P/J features low power dissipation when the device is deselected using chip enable (CE) and has an output enable input (OE) for fast memory access. The TC55B465P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TIL compatible. The TC55B465P/J is available in a 300mil width, 28-pin DIP and SOJ suitable for high density surface assembly.
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