Datasheet4U Logo Datasheet4U.com

TC55B465P-10 - SILICON GATE CMOS STATIC RAM

Description

The TC55B465P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply.

Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.

Features

  • low power dissipation when the device is deselected using chip enable (CE) and has an output enable input (OE) for fast memory access. The TC55B465P/J is suitable for use in high speed.

📥 Download Datasheet

Datasheet preview – TC55B465P-10

Datasheet Details

Part number TC55B465P-10
Manufacturer Toshiba
File Size 201.10 KB
Description SILICON GATE CMOS STATIC RAM
Datasheet download datasheet TC55B465P-10 Datasheet
Additional preview pages of the TC55B465P-10 datasheet.

📁 Similar Datasheet

Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
TOSHIBA 1l:55~65P/J-I0/12 SILICON GATE BiCMOS 65,536 WORD x 4 BIT BiCMOS STATIC RAM Description The TC55B465P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation. The TC55B465P/J features low power dissipation when the device is deselected using chip enable (CE) and has an output enable input (OE) for fast memory access. The TC55B465P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TIL compatible. The TC55B465P/J is available in a 300mil width, 28-pin DIP and SOJ suitable for high density surface assembly.
Published: |