Datasheet4U Logo Datasheet4U.com

TC55B464J-10 - SILICON GATE CMOS STATIC RAM

Download the TC55B464J-10 datasheet PDF. This datasheet also covers the TC55B464P-10 variant, as both devices belong to the same silicon gate cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The TC55B464P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply.

Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.

Features

  • low power dissipation when the device is deselected using chip enable (CE). The TC55B464P/J is suitable for use in high speed.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC55B464P-10-Toshiba.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
TC55B8128J-15 CMOS 1M-Bit Static RAM ETC
TC551001BFL-70L SILICON GATE CMOS STATIC RAM Toshiba Semiconductor
TC551001BFL-85L SILICON GATE CMOS STATIC RAM Toshiba Semiconductor
TC551001BFTL-70L SILICON GATE CMOS STATIC RAM Toshiba Semiconductor
TC551001BFTL-85L SILICON GATE CMOS STATIC RAM Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
TC55B464J-12 SILICON GATE CMOS STATIC RAM
TC55B464J 64K x 4-Bit BiCMOS Static RAM
TC55B464P 64K x 4-Bit BiCMOS Static RAM
TC55B464P-10 SILICON GATE CMOS STATIC RAM
TC55B464P-12 SILICON GATE CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TOSHIBA 1l:55~64P/J-I0/12 SILICON GATE BiCMOS 65,536 WORD x 4 BIT BiCMOS STATIC RAM Description The TC55B464P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation. The TC55B464P/J features low power dissipation when the device is deselected using chip enable (CE). The TC55B464P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL compatible. The TC55B464P/J is available in a 300mil width, 24-pin DIP and SOJ suitable for high density surface assembly. Features • Fast access time - TC55B464P/J-10 10ns (max.) - TC55B464P/J-12 12ns (max.
Published: |