TC55B464P-12 ram equivalent, silicon gate cmos static ram.
low power dissipation when the device is deselected using chip enable (CE). The TC55B464P/J is suitable for use in high speed applications such as cache memory and high s.
such as cache memory and high speed storage. All inputs and outputs are TTL compatible. The TC55B464P/J is available in .
The TC55B464P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B464.
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