TC55B329J-10 ram equivalent, 32k x 9-bit bicmos static ram.
low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access.
The TC55B329P/J is suitable f.
such as cache memory and high speed storage. All inputs and outputs are TTL compatible.
The TC55B329P/J is available in .
The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B329.
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