TC55B329J-12
Description
The TC55B329P/J is a 294,912 bit high speed Bi CMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's Bi CMOS technology and advanced circuit design enable high speed operation.
The TC55B329P/J features low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access.
The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL patible.
The TC55B329P/J is available in a 300mil width, 32-pin DIP and SOJ suitable for high density surface assembly.
Features
- Fast access time
- TC55B329P/J-10 10ns (max.)
- TC55B329P/J-12 12ns (max.)
- Low power dissipation
- Operation:
- TC55B329P/J-10 170m A (max.)
- TC55B329P/J-12 170m A (max.)
- Standby:
15m A (max.)
- Single...
