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TC551001BFL-10 Datasheet, Toshiba

TC551001BFL-10 ram equivalent, silicon gate cmos static ram.

TC551001BFL-10 Avg. rating / M : 1.0 rating-11

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TC551001BFL-10 Datasheet

Features and benefits

with an operating current of 5mNMHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode i.

Description

The TC551 001 BPL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating curren.

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TAGS

TC551001BFL-10
SILICON
GATE
CMOS
STATIC
RAM
Toshiba

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