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TC551001BFL-70L Datasheet, Toshiba Semiconductor

TC551001BFL-70L ram equivalent, silicon gate cmos static ram.

TC551001BFL-70L Avg. rating / M : 1.0 rating-11

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TC551001BFL-70L Datasheet

Features and benefits

with an operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode .

Description

The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with a.

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TAGS

TC551001BFL-70L
SILICON
GATE
CMOS
STATIC
RAM
TC551001BFL-70
TC551001BFL-10
TC551001BFL-10L
Toshiba Semiconductor

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