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TC518512PL-10LT Toshiba (https://www.toshiba.com/) SILICON GATE CMOS PSEUDO STATIC RAM

Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .b!gh speed and low power storage. The TC518512PL operates from a single 5V power supply. Refreshing is supported by a refresh (OEIRFSH) input which enables two types of refreshing - ...
Features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC518512PL-(LT) is guaranteed over an operating temperature range of -20 - 7LfC. The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plas...

Datasheet PDF File TC518512PL-10LT Datasheet - 296.69KB

TC518512PL-10LT  






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