Datasheet4U Logo Datasheet4U.com

TC518512PL-70DR - SILICON GATE CMOS PSEUDO STATIC RAM

Description

The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.

The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!J!gh speed and low power storage.

Features

  • a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small outline package (forward type, reverse type). Features.
  • Organization: 524,288 words x 8 bits.
  • Single 5V p.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TC51 1uA Voltage Detector Microchip
TC510 Precision Analog Front Ends Microchip
TC510 (TC5xx) PRECISION ANALOG FRONT ENDS TelCom Semiconductor
TC511402 1048576 x 4 BIT DYNAMIC RAM Toshiba Semiconductor
TC511402AJ-60 DRAM Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
TC518512PL-70 SILICON GATE CMOS PSEUDO STATIC RAM
TC518512PL-70LT SILICON GATE CMOS PSEUDO STATIC RAM
TC518512PL-70LV SILICON GATE CMOS PSEUDO STATIC RAM
TC518512PL-10 SILICON GATE CMOS PSEUDO STATIC RAM
TC518512PL-10DR SILICON GATE CMOS PSEUDO STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
rOSHIBA TC518512PL/FL/FIL/TRL-70(DR) /80 (DR) /10 (DR) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!J!gh speed and low power storage. The TC518512PL operates from a single 5V power supply. Refreshing is supported by a refresh (OEIRFSH) input which enables two types of refreshing - auto refresh and self refresh. The TC518512PL features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface.
Published: |