(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA) R.

* High-Speed Switching 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 .

SSM6N55NU

SSM6N57NU

SSM6N58NU

SSM6N03FE

SSM6N04FU

SSM6N05FU

SSM6N09FU

SSM6N15AFE

SSM6N15AFU

SSM6N15FE

SSM6N15FU

SSM6N16FE

SSM6N16FU

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts