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SSM6N03FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N03FE
High Speed Switching Applications Analog Switch Applications
Unit: mm
· Input impedance is high. Driving current is extremely low.
· Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage.
· High-speed switching.
· Housed in a ultra-small package which is suitable for high density mounting.
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature
VDS
20
V
VGSS
10
V
ID
100
mA
PD (Note 1)
150
mW
Tch
150
°C
Tstg
-55~150
°C
Note 1: Total rating, mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.
SSM6N03FE Datasheet
