(1) High VGSS voltage : ±12V (2) High VDSS voltage : -20V (3) Low drain-source on-resistance : RDS(ON) = 26 mΩ (typ.) (@VGS = -4.5 V,ID = -3.0A) RDS(ON) = 24 mΩ (typ.) (@.

* BATFETs
* Power Management Switches 2. Features (1) High VGSS voltage : ±12V (2) High VDSS voltage : -20V (3) .

SSM6J06FU

SSM6J07FU

SSM6J08FU

SSM6J205FE

SSM6J206FE

SSM6J207FE

SSM6J212FE

SSM6J213FE

SSM6J214FE

SSM6J215FE

SSM6J216FE

SSM6J21TU

SSM6J23FE

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts