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SSM6J511NU Datasheet, Toshiba

SSM6J511NU mosfet equivalent, silicon p-channel mosfet.

SSM6J511NU Avg. rating / M : 1.0 rating-12

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SSM6J511NU Datasheet

Features and benefits

(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 13.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 10 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assi.

Application


* Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) =.

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SSM6J511NU Page 1 SSM6J511NU Page 2 SSM6J511NU Page 3

TAGS

SSM6J511NU
Silicon
P-Channel
MOSFET
SSM6J512NU
SSM6J51TU
SSM6J501NU
Toshiba

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