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SSM6J512NU Datasheet, Toshiba

SSM6J512NU mosfet equivalent, silicon p-channel mosfet.

SSM6J512NU Avg. rating / M : 1.0 rating-13

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SSM6J512NU Datasheet

Features and benefits

(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (ty.

Application


* Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) =.

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TAGS

SSM6J512NU
Silicon
P-Channel
MOSFET
Toshiba

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