SSM6J512NU Datasheet Silicon P-Channel MOSFET

Manufacturer: Toshiba

Datasheet Details

MOSFETs Silicon P-Channel MOS SSM6J512NU 1.

Applications • Power Management Switches 2.

(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 24.0 mΩ (typ. ) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ. ) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (typ. ) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J512NU 1,2,5,6: Drain 3: Gate 4: Source ©2015-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-07 2021-09-17 Rev.2.0 SSM6J512NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Character.