HN4A06J - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	HN4A06J
Manufacturer	Toshiba
File Size	313.22 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	HN4A06J Datasheet

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A06J HN4A06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V Collector current Base current Collector power dissipation Junction temperature IC −100 mA IB −20 mA PC* 300 mW Tj 150 °C 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.