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HN4B06J - Silicon NPN/PNP Epitaxial Type Transistor

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Part number HN4B06J
Manufacturer Toshiba
File Size 545.17 KB
Description Silicon NPN/PNP Epitaxial Type Transistor
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HN4B06J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN4B06J Audio Frequency General Purpose Amplifier Applications Unit: mm Q1: z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC =− 2mA) = 0.95 (typ.) Q2: z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −120 −120 −5 −100 −20 Q2 Absolute Maximum Ratings (Ta = 25°C) 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) Unit 4.COLLECTOR2 (C2) 5.
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