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HN2S02JE Datasheet, Toshiba

HN2S02JE diode equivalent, silicon epitaxial schottky barrier type diode.

HN2S02JE Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 192.42KB)

HN2S02JE Datasheet

Application

z HN2S02JE is composed of two independent diodes. z Low forward voltage: VF (3) = 0.54V (typ.) z Low reverse current: IR.

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TAGS

HN2S02JE
Silicon
Epitaxial
Schottky
Barrier
Type
Diode
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

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