HN1D05FE diode equivalent, silicon epitaxial planar type diode.
(1) Small package (2) Low reverse current: IR(2) = 0.1 µA (max) (3) Low forward voltage: VF(2) = 1.0 V (typ.) (4) Fast reverse recovery time: trr = 0.5 µs (typ.) (5) Smal.
* High-Voltage Switching
2. Features
(1) Small package (2) Low reverse current: IR(2) = 0.1 µA (max) (3) Low forward.
Image gallery
TAGS
Download (Size : 213.32KB)