TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Ultra High Speed Switching Applications
Computer, Counter Applications
• High transition frequency: fT = 400 MHz (typ.)
• Low saturation voltage: VCE (sat) = 0.3 V (max)
• High speed switching time: tstg = 15 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
VCBO 40 V
Collector power dissipation
Storage temperature range
PC 100 mW
Tj 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.006 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).