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Toshiba Electronic Components Datasheet

C4667 Datasheet

2SC4667

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4667
Ultra High Speed Switching Applications
Computer, Counter Applications
2SC4667
Unit: mm
High transition frequency: fT = 400 MHz (typ.)
Low saturation voltage: VCE (sat) = 0.3 V (max)
High speed switching time: tstg = 15 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 40 V
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
VCEO
VEBO
IC
IB
15 V
5V
200 mA
40 mA
Collector power dissipation
Junction temperature
Storage temperature range
PC 100 mW
Tj 125 °C
Tstg
55~125
°C
JEDEC
JEITA
SC-70
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2E1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.006 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1 2007-11-01


Toshiba Electronic Components Datasheet

C4667 Datasheet

2SC4667

No Preview Available !

2SC4667
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Switching time Storage time
Turn-off time
ICBO
VCB = 40 V, IE = 0
⎯ ⎯ 0.1 μA
IEBO
VEB = 5 V, IC = 0
⎯ ⎯ 0.1 μA
hFE (1)
(Note 1)
VCE = 1 V, IC = 10 mA
40 240
hFE (2)
VCE (sat)
VBE (sat)
VCE = 1 V, IC = 100 mA
IC = 20 mA, IB = 1 mA
IC = 20 mA, IB = 1 mA
20 ⎯ ⎯
⎯ ⎯ 0.3 V
⎯ ⎯ 1.0 V
fT VCE = 10 V, IC = 10 mA
200 400 MHz
Cob VCB = 10 V, IE = 0, f = 1 MHz
4
6 pF
ton 70
tstg (Note 2) 15 ns
toff 30
Note 1: hFE (1) classification R: 40~80, O: 70~140, Y: 120~240
Note 2: Switching time test circuit
2 2007-11-01


Part Number C4667
Description 2SC4667
Maker Toshiba
PDF Download

C4667 Datasheet PDF






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