TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4667
Ultra High Speed Switching Applications
Computer, Counter Applications
2SC4667
Unit: mm
• High transition frequency: fT = 400 MHz (typ.)
• Low saturation voltage: VCE (sat) = 0.3 V (max)
• High speed switching time: tstg = 15 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 40 V
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
VCEO
VEBO
IC
IB
15 V
5V
200 mA
40 mA
Collector power dissipation
Junction temperature
Storage temperature range
PC 100 mW
Tj 125 °C
Tstg
−55~125
°C
JEDEC
JEITA
―
SC-70
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2E1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.006 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1 2007-11-01
