C4667 Datasheet | Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4667 Ultra High Speed Switching Applications puter, Counter Applications 2SC4667 Unit: mm - High transition frequency: f T = 400 MHz (typ.) - Low saturation voltage: VCE (sat) = 0.3 V (max) - High speed switching time: tstg = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage Emitter-base voltage Collector current Base current VCEO VEBO IC IB 15 V 5V 200 m A 40 m A Collector power dissipation Junction temperature Storage temperature range PC 100 m W Tj 125 °C Tstg - 55~125 °C JEDEC JEITA ― SC-70 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2E1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.006 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 1 2007-11-01 2SC4667 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test...