| Part number | C3670 |
|---|---|
| Datasheet | C3670-Toshiba.pdf |
| File Size | 123.24 KB |
| Manufacturer | Toshiba |
| Description | 2SC3670 |
|
|
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications 2SC3670 Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A).
| Part Number | Description |
|---|---|
| C3671 | 2SC3671 |
| C3672 | 2SC3672 |
| C3673 | 2SC3673 |
| C3606 | 2SC3606 |
| C3607 | 2SC3607 |
| C3620 | 2SC3620 |
| C3621 | 2SC3621 |
| C3668 | 2SC3668 |
| C3669 | 2SC3669 |
