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Toshiba Electronic Components Datasheet

C3670 Datasheet

2SC3670

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3670
Strobe Flash Applications
Medium Power Amplifier Applications
2SC3670
Unit: mm
High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)
Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 2 A, IB = 50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
30
30
10
6
2
5
0.5
1000
150
55 to 150
V
V
V
A
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
http://store.iiic.cc/
2009-12-21


Toshiba Electronic Components Datasheet

C3670 Datasheet

2SC3670

No Preview Available !

Electrical Characteristics (Ta = 25°C)
2SC3670
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 30 V, IE = 0
IEBO
VEB = 6 V, IC = 0
VCEO
IC = 10 mA, IB = 0
VEBO
IC = 1 mA, IC = 0
hFE (1)
(Note 3)
VCE = 1 V, IC = 0.5 A
hFE (2)
VCE = 1 V, IC = 2 A
VCE (sat) IC = 2 A, IB = 50 mA
VBE VCE = 1 V, IC = 2 A
fT VCE = 1 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
― ― 100 nA
― ― 100 nA
10 ― ―
V
6 ―― V
140 600
70 200
0.2 0.5
V
0.86 1.5
V
150 MHz
27 pF
Note 3: hFE (1) classification A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600
Marking
C3670
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
http://store.iiic.cc/
2009-12-21


Part Number C3670
Description 2SC3670
Maker Toshiba
PDF Download

C3670 Datasheet PDF






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