The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SC3678
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C) External Dimensions MT-100(TO3P)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
2SC3678 900 800 7
3(Pulse6) 1.5
80(Tc=25°C) 150
–55 to +150
Unit V V V A A W °C °C
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
Conditions VCB=800V
VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.3A VCB=10V, f=1MHz
2SC3678 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 50typ
Unit µA µA V
V V MHz pF
20.0min 4.0max
19.9±0.3 4.0 2.0
1.8 5.0±0.2
15.6±0.4 9.6
4.8±0.2 2.0±0.1
a ø3.2±0.1 b
2
3
1.05
+0.2 -0.1
0.65
+0.2 -0.
C3678 Datasheet
