2SK270 - Silicon N-Channel Transistor

Toshiba

Key Features

. 1 Chip Dual Type. . Recommended for First Differential Stages of DC Amplifiers. . Very High Yf I s1 : iYf s l=20mS(Typ. ) (VDS=10V, Vgs=0, f=lkHz, I DS S=3mA) . Good Pair Characteristics : lVGSl-VGS2l=30mV(Max. )(VDS=10V, lD=lmA) . High Breakdown Voltage : VGDS=_ 40(Min. . Very Low Noise : NF=0. 5dB(Typ. (VDS =10V, lD=lmA, R g =lkQ, f=lkHz) . High Input Impedance : lGSS =- 10nA(Max. (Vgs =- 30V) . Complementary to 2SJ90.

2SK270 silicon n-channel transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK270
Manufacturer	Toshiba
File Size	128.92 KB
Description	Silicon N-Channel Transistor
Datasheet	2SK270 Datasheet

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2SK270 SILICON MONOLITHIC N CHANNEL JUNCTION TYPE LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES . 1 Chip Dual Type. . Recommended for First Differential Stages of DC Amplifiers. . Very High Yf I s1 : iYf s l=20mS(Typ.) (VDS=10V, Vgs=0, f=lkHz, I DS S=3mA) . Good Pair Characteristics : lVGSl-VGS2l=30mV(Max.)(VDS=10V, lD=lmA) . High Breakdown Voltage : VGDS=_ 40(Min. . Very Low Noise : NF=0. 5dB(Typ. (VDS =10V, lD=lmA, R g =lkQ, f=lkHz) . High Input Impedance : lGSS =- 10nA(Max. (Vgs =- 30V) . Complementary to 2SJ90 . MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation SYMBOL VGDS IG PD Junction Temperature Storage Temperature Range T stg RATING UNIT -40 10 mA 300 iiWT" UNIT 125 -55^125 C1.