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2SD821 Datasheet Toshiba

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Toshiba · 2SD821 File Size : 90.81KB · 1 hits

Features and Benefits


• High Voltage : VCBO=1500V
• Low Saturation Voltage : VCE (sat)=5V (Max.) (I C=5A, I B =1A)
• High Speed : t f =1.0us (Max.)
• Glass Passivated Collector-Base Junction. Unit in mm p*25.0MAX. £21.0 M.

2SD821 2SD821 2SD821
TAGS
NPN
Transistor
2SD820
2SD821
2SD822

Stock and Price

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