2SD820
Overview
- High Voltage : VcBO=1500V
- Low Saturation Voltage : v CE(sat)=5V (Max.) (I C =4A,
- High Speed : tf=1.0ys (Max.) I B=0.8A)
- Glass Passivated Collector-Base Junction. Unit in mm , + Q09 £10-0.03 W
| Part | 2SD820 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Toshiba |
| Size | 41.54 KB |