• Part: 2SD821
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 90.81 KB
Download 2SD821 Datasheet PDF
Toshiba
2SD821
FEATURES - High Voltage : VCBO=1500V - Low Saturation Voltage : VCE (sat)=5V (Max.) (I C=5A, I B =1A) - High Speed : t f =1.0us (Max.) - Glass Passivated Collector-Base Junction. Unit in mm p- 25.0MAX. £21.0 MAX . f Q09 £1.0-003 3Q2±02 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO RATING 1500 600 UNIT V V Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range Vebo ic IE PC T j T stg ELECTRICAL CHARACTERISTICS CHARACTERISTIC (Ta=25°C) SYMBOL 5V 1. BASE 6A -6 A 2. EMITTER COLLECTOR(CASE) 50 W JEDEC TO-3 EIAJ 150 °C TC-3 - - TB-3 TOSHIBA 2- 21B1A -65v L50 °C Mounting kit No, AC42C Weight : 17g TEST...