2SB999
2SB999 is Silicon PNP Transistor manufactured by Toshiba.
- Part of the 2SB998 comparator family.
- Part of the 2SB998 comparator family.
FEATURES
. High DC Current Gain,: h FE=2000(Min. ) (at Vce=-3V, Ic=-3A; . Low Saturation Voltage : Vc E(sat)=-l .5V(Max. ) (at Ic=-3A^ . plementary to 2SD1357, 2SD1358 and 2SD1359
INDUSTRIAL APPLICATIONS Unit in mm
10.3 MAX 03.2±O.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
2SB997 2SB998 2SB999
Collector-Emitter Voltage
2SB997 2SB998 2SB999
SYMBOL VCBO VCEO
RATING -100 -80 -60
-100 -80 -60
UNIT
+ Q25 176-Q15
2.54±0.2£
Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT
VEBO IC IB PC
-stg
-5 -7 -0.2
-55 -150
(COLLECTOR
+1 n 2 .^;
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
Tt
-5k Q
ELECTRICAL CHARACTERISTICS (T a=25°C)
CHARACTERISTIC
SYMBOL
I j
!
EMITTER
TOSHIBA
2-10K1A
Weight : 2.0g
TEST...
